DCR1950C52 phase control thyr istor ds5817 - 3 january 2014 (ln 3 1254 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repet itive peak voltages v drm and v rrm v conditions DCR1950C52* dcr1950c50 dcr1950c48 5200 5000 4800 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *5000v @ - 40 o c, 5200v @ 0 o c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: DCR1950C52 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 5200v i t(av) 1950a i tsm 26250a dv/dt* 1500v/s di/dt 300a/s * higher dv/dt selections available outline type code: c (see package details for further information) fig. 1 packa ge outline
semiconductor DCR1950C52 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 1950 a i t(rms) rms value - 30 60 a i t continuous (direct) on - state current - 3000 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 26.25 ka i 2 t i 2 t for fusi ng v r = 0 3.45 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0101 c/w single side cooled anode dc - 0.0176 c/w cathode dc - 0.0239 c/w r th(c - h) thermal resistance C case to heatsink clamping force 37kn double side - 0.0025 c/w (with mounting compound) single side - 0.005 c/w t vj virtual junction temperature blocking v drm / vrrm - 12 5 c t stg storage temperature range - 55 125 c f m clamping force 33.0 41.0 kn
semiconductor DCR1950C52 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 150 a/s gate source 30v, 10 ? , non - r epetitive - 300 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500a to 2000a at t case = 125c - 0.932 v threshold voltage C high level 2000a to 7000a at t case = 125c - 1.100 v r t on - state slope resistance C low level 50 0a to 2000a at t case = 125c - 0.434 m ? on - state slope resistance C high level 2000a to 7000a at t case = 125c - 0.346 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 2 00v, di/dt = 1a/s, 700 1100 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt C 1a/s, 1200 2800 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 m a
semiconductor DCR1950C52 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt g ate trigger current v drm = 5v, t case = 25c 3 50 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = - 0.142705 b = 0.203 033 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000358 d = - 0.00751 these values are valid for t j = 125c for i t 100a to 7200a 0 1000 2000 3000 4000 5000 6000 7000 1.0 2.0 3.0 4.0 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) min 125c max 125c min 25c max 25c
semiconductor DCR1950C52 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible ca se temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1000 2000 3000 4000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor DCR1950C52 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig .9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 time - ( s ) thermal impedance, z th(j-c) - ( c/kw) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 1.1043 2.576 4.5096 1.9009 t i (s) 0.006176 0.0517916 0.3820376 1.06 anode side cooled r i (c/kw) 1.0977 2.4566 4.0469 9.9994 t i (s) 0.006153 0.050142 0.3129407 5.27 cathode side cooled r i (c/kw) 1.1519 2.8926 2.4064 17.4793 t i (s) 0.006389 0.0582953 0.3775516 3.97 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.95 1.26 180 1.95 1.26 180 1.95 1.26 120 2.32 1.89 120 2.32 1.89 120 2.31 1.88 90 2.74 2.27 90 2.74 2.27 90 2.72 2.26 60 3.14 2.70 60 3.14 2.70 60 3.12 2.68 30 3.46 3.19 30 3.46 3.19 30 3.43 3.17 15 3.61 3.47 15 3.62 3.47 15 3.58 3.44
semiconductor DCR1950C52 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery c urrent 0 2000 4000 6000 8000 10000 12000 14000 16000 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) stored charge, q s - (uc) q rrmax = 3520.8*(di/dt) 0.48 q rrmin = 1586.7*(di/dt) 0.6143 conditions: t j = 125 o c, v rpeak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse volts 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) reverse recovery charge, i rr - (a) i rrmax = 50.852*(di/dt) 0.7153 i rrmin = 33.147*(di/dt) 0.7865 conditions : t j = 125 o c, v rpeak ~3100v v rm ~ 2100v snubber as appropriate to control reverse volts
semiconductor DCR1950C52 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c
semiconductor DCR1950C52 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: c fig.16 package outline device maximum thickness (mm) minimum thickness (mm) dcr2860c22 26.415 25.865 dcr2630c28 26.49 25.94 dcr2150c42 26.76 26.17 DCR1950C52 26.84 26.29 dcr1650c65 27.1 26.55 dcr1370c85 27.46 26.91
semiconductor DCR1950C52 10 / 10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publica tion are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a spe cific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additio nal product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric cha rge remaini ng in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication d esign and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved f or production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. provisional information: some initi al development work has been performed. the datasheet represents a view of the end product based on very limited information. certain details will change. preliminary information: the product design is complete and final characterisation for volume produc tion is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0 ) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd . technical documentation C not for resale .
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